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| TPCS8104 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) TPCS8104 Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications * * * * * Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 8.1 m (typ.) High forward transfer admittance: |Yfs| = 23 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -30 V) Enhancement-mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating -30 -30 20 -11 -44 1.1 0.6 31.5 -11 0.11 150 -55 to 150 Unit V V V A Pulse (Note 1) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range JEDEC W W mJ A mJ C C 8 7 6 5 2-3R1B JEITA TOSHIBA Weight: 0.035 g (typ.) Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2 3 4 1 2002-04-05 TPCS8104 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 114 208 Unit C/W C/W Marking (Note 5) Type S8104 Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = -24 V, Tch = 25C (initial), L = 0.2 mH, RG = 25 , IAR = -11 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: on lower right of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-04-05 TPCS8104 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain ("miller") charge tf toff Qg Qgs1 Qgd Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) |Yfs| Ciss Crss Coss tr ton 0V VGS -10 V 4.7 ID = -5.5 A VOUT RL = 2.7 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = -30 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 20 V VDS = -10 V, ID = -1 mA VGS = -4 V, ID = -5.5 A VGS = -10 V, ID = -5.5 A VDS = -10 V, ID = -5.5 A Min -30 -15 -0.8 11 Typ. 12 8.1 23 5710 560 590 18 23 109 396 107 12 20 Max 10 -10 -2.0 18 12 ns nC pF Unit A A V V m S Duty < 1%, tw = 10 s = VDD -15 V - VDD -24 V, VGS = 10 V, - ID = -11 A Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Forward voltage (diode) Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -11 A, VGS = 0 V Min Typ. Max -44 1.2 Unit A V 3 2002-04-05 TPCS8104 ID - VDS -10 -10 -5 -3 -4 -2.5 -2.4 -2.3 -6 -2.2 -4 -2.1 -2 VGS = -2 V Common source Ta = 25C Pulse test -20 -10 -3 -2.7 -5 -4 ID - VDS -2.6 -2.5 Common source Ta = 25C Pulse test -8 -16 (A) (A) ID ID -12 -2.4 Drain current Drain current -2.3 -8 -2.2 -4 VGS = -2.1 V 0 0 -2 -4 -6 -8 -10 0 0 -4 -8 -12 -16 -20 Drain-source voltage VDS (V) Drain-source voltage VDS (V) ID - VGS -40 Common source VDS = -10 V Pulse test -0.5 VDS - VGS Common source Ta = 25C Pulse test (V) Drain-source voltage VDS ID (A) -30 -0.4 -0.3 Drain current -20 -0.2 ID = -11 A -0.1 -5.5 -10 25 100 0 0 -1 -2 Ta = -55C -3 -4 -5 0 0 -2.5 -4 -8 -12 -16 -20 Gate-source voltage VGS (V) Gate-source voltage VGS (V) |Yfs| - ID 100 100 50 Ta = -55C 25 10 5 3 100 RDS (ON) - ID |Yfs| (S) 50 Drain-source ON resistance RDS (ON) (m) 30 30 VGS = -4.5 V 10 5 3 -10 Forward transfer admittance 1 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 Common source VDS = -10 V Pulse test -10 -30 -50 1 0.5 0.3 -0.1 -0.3 -0.5 -1 -3 -5 Common source Ta = 25C Pulse test -10 -30 -50 Drain current ID (A) Drain current ID (A) 4 2002-04-05 TPCS8104 RDS (ON) - Ta 25 Common source 20 ID = -11 A, -5.5 A, -2.5 A Pulse test -100 -10 IDR - VDS -5 -3 -10 Drain-source ON resistance RDS (ON) (m) VGS = -4.5 V 10 ID = -11 A, -5.5 A, -2.5 A 5 -10 Drain reverse current 15 IDR (A) -1 -1 VGS = 0 V 0 -80 -40 0 40 80 120 160 -0.1 0 Common source Ta = 25C Pulse test 0.2 0.4 0.6 0.8 1 Ambient temperature Ta (C) Drain-source voltage VDS (V) Capacitance - VDS 50000 30000 -2.5 Vth - Ta Common source VDS = -10 V -2 ID = -1 mA Pulse test -1.5 (pF) 10000 5000 3000 Ciss Gate threshold voltage Vth (V) Capacitance C 1000 500 Coss Crss -1 Common source 300 VGS = 0 V f = 1 MHz Ta = 25C 100 -0.1 -0.3 -1 -0.5 -3 -10 -30 -100 0 -80 -40 0 40 80 120 160 Drain-source voltage VDS (V) Ambient temperature Ta (C) PD - Ta 2.0 (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) t = 10 s -30 Dynamic Input/Output Characteristics -12 (W) (V) 1.6 VDD = -24 V -12 VDS -12 -6 -8 VDD = -24 V -6 Common source PD Drain-source voltage VDS -20 Drain power dissipation -15 -6 -10 VGS ID = -11 A Ta = 25C Pulse test -5 0.8 (2) 0.4 -4 -2 0 0 25 50 75 100 125 150 175 0 0 20 40 60 80 100 120 0 140 Ambient temperature Ta (C) Total gate charge Qg (nC) 5 2002-04-05 Gate-source voltage 1.2 (1) VGS (V) -25 -10 TPCS8104 rth - tw 1000 Normalized transient thermal impedance rth (C/W) (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) 100 t = 10 s (2) (1) 10 1 Single pulse 0.1 0.001 0.01 0.1 1 10 100 1000 Pulse width tw (s) Safe Operating Area 100 ID max (pulse)* 1 ms* 10 10 ms* Drain current ID 1 0.1 *: Single pulse (A) Ta = 25C 0.01 0.01 Curves must be derated linearly with increase in temperature. 0.1 1 VDSS max 10 100 Drain-source voltage VDS (V) 6 2002-04-05 TPCS8104 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 7 2002-04-05 |
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